The High-k and ALD/CVD Metal Precursors Market size is expected to grow at an annual average of % during 2021-2027. Materials have high dielectric values and are used to quickly access and store data. ALD not only provides thickness control at the angstrom level, but also provides incredible deposition conformality at high aspect ratio structures. ALD technology is used to produce thin films using high-k dielectric materials such as Al2O3, Ta2O5, HfO2, ZrO2 for DRAM, and high-k gate oxides and nitrides for electrodes and interconnects.
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A full report of High-k and ALD/CVD Metal Precursors Market is available at: https://www.orionmarketreports.com/high-k-and-ald-cvd-metal-precursors-market/37792/
The following segmentation are covered in this report:
By Technology
- Interconnect
- Capacitors
- Gates
By Industry Vertical
- Consumer Electronics
- Aerospace and Defence
- IT and Telecommunication
- Industrial
- Automotive
- Healthcare
- Others
The report covers the following objectives:
- Proliferation and maturation of trade in the global High-k and ALD/CVD Metal Precursors Market
- The market share of the global High-k and ALD/CVD Metal Precursors Market supply and demand ratio, growth revenue, supply chain analysis, and business overview.
- Current and future market trends that are influencing the growth opportunities and growth rate of the High-k and ALD/CVD Metal Precursors Market
- Feasibility study, new market insights, company profiles, investment return, revenue (value), and consumption (volume) of the global High-k and ALD/CVD Metal Precursors Market
(This release has been published on OMR Industry Journal. OMR Industry Journal is not responsible for any content included in this release.)
