The global GaN and SiC power semiconductor market is estimated to exhibit a CAGR of over 25% during the forecast period. In power electronics, Si-based power devices have proven to be efficient in a wide range of applications. However, for higher power and higher frequency applications, more power is required, thus technologically advanced SiC along with GaN power devices are being introduced as an alternative of Si-based power devices for high power and high-efficiency applications. These SiC and GaN possess numerous benefits including high-operating electric field, high-switching frequency, high-breakdown voltage, high operating temperature, and low losses.
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The factors that drive the growth of the market include the rapid technological advancements and growth in the semiconductor industry. As these devices are widely utilized in power applications for charging infrastructure, rail traction, and renewable power, among others, the adoption of these devices provide growth opportunities to the market. Moreover, the rise in the need for power efficiency in industrial applications along with automotive electronics is further fuelling the adoption of semiconductor materials & technologies, hence contributing to the growth of the GaN and SiC Power semiconductor market. However, higher costs, high defect density, limited wafer size, and shortage are some of the factors that act as a challenge in the market.
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Global GaN and SiC Power Semiconductor Market Segmentation
By Product
- SiC Power Module
- GaN Power Module
- Discrete SiC
- Discrete GaN
By Application
- Power Supplies
- Industrial Motor Drives
- Electric Vehicles
- PV Inverters
- Others
(This release has been published on OMR Industry Journal. OMR Industry Journal is not responsible for any content included in this release.)