The Global Gallium Nitride Wafer Market size is expected to grow at an annual average of 7.93% during 2021-2027. GaN is a wide bandgap material or banding material with significant advantages over other semiconductor materials such as silicon, silicon carbide, aluminum, etc. Nitride devices such as light emitters, transistors and diodes rely heavily on heteroepitaxial growth of GaN on external substrates such as silicon, silicon carbide and sapphire. The majority of the GaN substrate market consists of substrates and is moving toward adoption of bulk GaN substrates.
A full report of Global Gallium Nitride Wafer Market is available at: https://www.orionmarketreports.com/gallium-nitride-wafer-market/45893/
The following players are covered in this report:
By Size:
- Introduction
- 2 inch Substrate
- 4 inch Substrate
- 6 inch Substrate
- 8 inch Substrate
By Type:
- GaN on Sapphire
- GaN on Si
- GaN on SiC
- GaN on GaN
By End-use Product:
- Laser
- Light Emitting Diodes (LED)
- Power Electronics Devices
- High Frequency Electronic Devices
- Others
By Application:
- Servers and data Centers
- LiDAR
- Wireless charging applications
- Power Supply
- Uninterruptable power supply (UPS)
- Others
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