The Gallium Nitride Semiconductor Market size is expected to grow at an annual average of 3% during 2021-2027. Gallium nitride (GaN) is a wide bandgap semiconductor material. Performance advantages over silicon counterparts such as the ability to operate at higher temperatures, higher frequencies, and higher power densities along with higher operating voltages are driving the growth of the global gallium nitride semiconductor device market.
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A full report of Gallium Nitride Semiconductor Market is available at: https://www.orionmarketreports.com/gallium-nitride-semiconductor-market/45675/
The following segmentation are covered in this report:
By Application
- Power Drivers
- Supply and Inverter
- Radio Frequency
- Lighting and Laser
By Device Type
- Opto-semiconductor
- Power Semiconductor
- RF Semiconductor
By Component
- Transistor
- Diode
- Rectifier
- Power IC
- Other
Company Profile
- Cree, Inc.
- Efficient Power Conversion Corporation
- Fujitsu Ltd.
- GaN Systems
- Infineon Technologies AG
- NexGen Power Systems
The report covers the following objectives:
- Proliferation and maturation of trade in the global Gallium Nitride Semiconductor Market.
- The market share of the global Gallium Nitride Semiconductor Market, supply and demand ratio, growth revenue, supply chain analysis, and business overview.
- Current and future market trends that are influencing the growth opportunities and growth rate of the global Gallium Nitride Semiconductor Market.
- Feasibility study, new market insights, company profiles, investment return, revenue (value), and consumption (volume) of the global Gallium Nitride Semiconductor Market.
(This release has been published on OMR Industry Journal. OMR Industry Journal is not responsible for any content included in this release.)
