The gallium nitride semiconductor device market was valued at USD 191.2 billion in 2019 and is expected to reach USD 269.9 billion by 2027, and is expected to grow at a CAGR of 4% from 2021 to 2027.
The increasing use of GaN in 5G infrastructure is an important aspect of increasing market revenue for gallium nitride semiconductor devices, and the application of electric and hybrid electric vehicles will drive the market growth. The Global Gallium Nitride Semiconductor Device Market report provides a holistic assessment of the market. The report provides a comprehensive analysis of the key segments, trends, drivers, limitations, competitive landscape, and factors playing an important role in the market.
A full report of Gallium Nitride Semiconductor Device Market available at https://www.orionmarketreports.com/3d-printing-metals-market/27814/
Gallium Nitride Semiconductor Device Market Segmentations
By Device Type
• Power Semiconductor
• RF Semiconductor
• Opto Semiconductor
By Wafer Size
• 2 Inch
• 4 Inch
• 6-Inch and Above
By Application
• Radio Frequency
• Power Drivers, Lighting and Laser
• Supply and Inverter
• Others
By Vertical
• Military, Defense, and Aerospace
• Automotive
• Consumer and Enterprise
• Medical
• Others
Company Profiles
• Infineon
• Samsung
• Mitsubishi Electric
• Efficient Power Conversion (EPC)
• Cree
• Microsemi
• Analog Devices
• Macom
• Panasonic
• Sumitomo Electric
• Texas Instruments
• GaN Systems
• Nichia
• Northrop Grumman Corporation
• Dialog Semiconductor
• Epistar
(This release has been published on OMR Industry Journal. OMR Industry Journal is not responsible for any content included in this release.)
