The global GaN semiconductor device market size was valued at $1.44 billion in 2019 and is projected to expand at a CAGR of 19% from 2021 to 2027. With low power consumption and high efficiency. Gallium nitride (GaN) based semiconductors have dynamic electrical properties such as high thermal conduction, large electric field, high saturation rate, and high breakdown voltage, making them an ideal choice for use in various switching devices.
A full report of GaN Semiconductor Devices Market available at: https://www.orionmarketreports.com/gan-power-semiconductor-devices-market/9454/
Major Players
• Panasonic Corporation
• Toshiba Corporation
• Texas Instruments
• NXP Semiconductors NV
• Infineon Technologies AG
GaN Semiconductor Devices Market- Segmentation
By Device Type
• Opto-semiconductors
• Power Semiconductors
• RF Semiconductors
By Wafer Size
• 2 Inches
• 4 Inches
• 6 Inches and Above
By Application
• Lighting and Lasers
• Supplies and Inverters
• Radio Frequency
• Power Drives
By Application
• Consumer and Enterprises
• Industrial
• Telecommunications
• Automotive
• Renewables
• Aerospace and Defense
• Healthcare
(This release has been published on OMR Industry Journal. OMR Industry Journal is not responsible for any content included in this release.)
